Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy

J. W. Liu, A. Kobayashi, S. Toyoda, H. Kamada, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, M. Oshima

研究成果: Article査読

23 被引用数 (Scopus)

抄録

C-plane (polar) and m-plane (nonpolar) GaN/ZnO heterostructures have been fabricated by pulsed laser deposition at room temperature, and their electronic structures have been characterized by synchrotron radiation photoemission spectroscopy. Based on the binding energies of core levels and valence band maximum values, the valence band offsets have been found to be 0.7±0.1 and 0.9±0.1eV for polar and nonpolar GaN/ZnO heterojunctions, respectively. Both heterostructures show type-II band configurations with conduction band offsets of 0.8±0.1 and 1.0±0.1eV, respectively. GaN and ZnO show upward and downward band bending toward the interface in the nonpolar GaN/ZnO heterojunction. However, both GaN and ZnO show upward band bending toward the interface in the polar heterojunction, which is attributed to negative charges. Analysis of N 1s spectra has revealed that N-O bonds exist only at the polar interface, which probably caused the formation of the negative charges.

本文言語English
ページ(範囲)956-959
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
248
4
DOI
出版ステータスPublished - 2011 4 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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