Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

M. Oshima, H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Inoue, M. Mizutani, J. Yugami

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON/SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlate them with electrical properties. We have found that the N3 component in N is can be correlated with electron trapping. Photoelectron spectra and O k-edge absorption spectra confirm the existence of the SiO2-rich phase-separated area in HfSiON films. Band offsets for the HfSiON/Si and the SiO2-rich HfSiON/Si are determined to be 2.5 and 4.2 eV for valence band and 1.7 and 3.6 eV for conduction band, respectively.

本文言語English
論文番号033709
ジャーナルJournal of Applied Physics
100
3
DOI
出版ステータスPublished - 2006 8 25
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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