Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

M. Oshima; H. Takahashi; J. Okabayashi; S. Toyoda; H. Kumigashira; M. Inoue; M. Mizutani; J. Yugami

doi:10.1063/1.2219694

Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

M. Oshima, H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Inoue, M. Mizutani, J. Yugami

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON/SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlate them with electrical properties. We have found that the N3 component in N is can be correlated with electron trapping. Photoelectron spectra and O k-edge absorption spectra confirm the existence of the SiO₂-rich phase-separated area in HfSiON films. Band offsets for the HfSiON/Si and the SiO₂-rich HfSiON/Si are determined to be 2.5 and 4.2 eV for valence band and 1.7 and 3.6 eV for conduction band, respectively.

本文言語	English
論文番号	033709
ジャーナル	Journal of Applied Physics
巻	100
号	3
DOI	https://doi.org/10.1063/1.2219694
出版ステータス	Published - 2006 8 25
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy(all)

文献へのアクセス

10.1063/1.2219694

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引用スタイル

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title = "Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy",

abstract = "We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON/SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlate them with electrical properties. We have found that the N3 component in N is can be correlated with electron trapping. Photoelectron spectra and O k-edge absorption spectra confirm the existence of the SiO2-rich phase-separated area in HfSiON films. Band offsets for the HfSiON/Si and the SiO2-rich HfSiON/Si are determined to be 2.5 and 4.2 eV for valence band and 1.7 and 3.6 eV for conduction band, respectively.",

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AU - Oshima, M.

AU - Takahashi, H.

AU - Okabayashi, J.

AU - Toyoda, S.

AU - Kumigashira, H.

AU - Inoue, M.

AU - Mizutani, M.

AU - Yugami, J.

PY - 2006/8/25

Y1 - 2006/8/25

N2 - We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON/SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlate them with electrical properties. We have found that the N3 component in N is can be correlated with electron trapping. Photoelectron spectra and O k-edge absorption spectra confirm the existence of the SiO2-rich phase-separated area in HfSiON films. Band offsets for the HfSiON/Si and the SiO2-rich HfSiON/Si are determined to be 2.5 and 4.2 eV for valence band and 1.7 and 3.6 eV for conduction band, respectively.

AB - We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON/SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlate them with electrical properties. We have found that the N3 component in N is can be correlated with electron trapping. Photoelectron spectra and O k-edge absorption spectra confirm the existence of the SiO2-rich phase-separated area in HfSiON films. Band offsets for the HfSiON/Si and the SiO2-rich HfSiON/Si are determined to be 2.5 and 4.2 eV for valence band and 1.7 and 3.6 eV for conduction band, respectively.

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