Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)

Y. Enta, Y. Takegawa, D. Shoji, M. Suemitsu, Y. Takakuwa, H. Kato, N. Miyamoto

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The photoelectron intensities from the surface states on Si(100) periodically oscillate during Si growth and that oscillation is associated with the alternation between the 2×1 and the 1×2 surface reconstructions [Y. Enta et al., Surf. Sci. 313(1994)L797]. For clarifying the origin of the oscillation in more detail, angle-resolved-ultraviolet-photoelectron-spectroscopy measurements for both Si(100)2×1 and 1×2 clean surfaces have been performed. As a result, it was found that the photoelectron intensity oscillations on Si(100) arise from the difference in the surface band dispersions between the 2×1 and the 1×2 clean surfaces.

本文言語English
ページ(範囲)173-176
ページ数4
ジャーナルJournal of Electron Spectroscopy and Related Phenomena
80
DOI
出版ステータスPublished - 1996 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 放射線
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 分光学
  • 物理化学および理論化学

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