The photoelectron intensities from the surface states on Si(100) periodically oscillate during Si growth and that oscillation is associated with the alternation between the 2×1 and the 1×2 surface reconstructions [Y. Enta et al., Surf. Sci. 313(1994)L797]. For clarifying the origin of the oscillation in more detail, angle-resolved-ultraviolet-photoelectron-spectroscopy measurements for both Si(100)2×1 and 1×2 clean surfaces have been performed. As a result, it was found that the photoelectron intensity oscillations on Si(100) arise from the difference in the surface band dispersions between the 2×1 and the 1×2 clean surfaces.
|ジャーナル||Journal of Electron Spectroscopy and Related Phenomena|
|出版ステータス||Published - 1996 5|
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