Band alignment at β -(AlxGa1- x)2O3/ β -Ga2O3 (100) interface fabricated by pulsed-laser deposition

Ryo Wakabayashi, Mai Hattori, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

研究成果: Article査読

28 被引用数 (Scopus)

抄録

High-quality β-(AlxGa1- x)2O3 (x = 0-0.37) films were epitaxially grown on β-Ga2O3 (100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-Ga2O3 and α-Al2O3. The bandgap was tuned from 4.55 ± 0.01 eV (x = 0) to 5.20 ± 0.02 eV (x = 0.37), where bowing behavior was observed. The band alignment at the β-(AlxGa1- x)2O3/β-Ga2O3 interfaces was found to be type-I with conduction- and valence-band offsets of 0.52 ± 0.08 eV (0.37 ± 0.08 eV) and 0.13 ± 0.07 eV (0.02 ± 0.07 eV) for x = 0.37 (0.27), respectively. The large conduction-band offsets are ascribed to the dominant contribution of the cation-site substitution to the conduction band.

本文言語English
論文番号232103
ジャーナルApplied Physics Letters
112
23
DOI
出版ステータスPublished - 2018 6 4
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Band alignment at β -(Al<sub>x</sub>Ga<sub>1-</sub> <sub>x</sub>)<sub>2</sub>O<sub>3</sub>/ β -Ga<sub>2</sub>O<sub>3</sub> (100) interface fabricated by pulsed-laser deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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