Ballistic electron transport in macroscopic four-terminal square structures with high mobility

Yoshiro Hirayama; T. Saku; S. Tarucha; Y. Horikoshi

doi:10.1063/1.104803

Ballistic electron transport in macroscopic four-terminal square structures with high mobility

Yoshiro Hirayama, T. Saku, S. Tarucha, Y. Horikoshi

研究成果: Article › 査読

47 被引用数 (Scopus)

抄録

Ballistic electron transport characteristics are studied using macroscopic four-terminal square structures formed in high-mobility wafers (μ=7.8×10⁶ cm²/V s at 1.5 K). Ballistic transport over 200 μm can be detected as a negative peak in resistance around B=0 T when four-terminal resistance is measured as a function of magnetic field. The ballistic mean free path (l_b) of electrons is evaluated from the size dependence of the negative peak height. The estimated l_b becomes 86 μm, which is approximately equal to a conventional mean free path calculated from carrier density and mobility of the wafer.

本文言語	English
ページ（範囲）	2672-2674
ページ数	3
ジャーナル	Applied Physics Letters
巻	58
号	23
DOI	https://doi.org/10.1063/1.104803
出版ステータス	Published - 1991 12 1
外部発表	はい

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.104803

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引用スタイル

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