Ballistic electron transport in macroscopic four-terminal square structures with high mobility

Yoshiro Hirayama, T. Saku, S. Tarucha, Y. Horikoshi

研究成果: Article査読

47 被引用数 (Scopus)

抄録

Ballistic electron transport characteristics are studied using macroscopic four-terminal square structures formed in high-mobility wafers (μ=7.8×106 cm2/V s at 1.5 K). Ballistic transport over 200 μm can be detected as a negative peak in resistance around B=0 T when four-terminal resistance is measured as a function of magnetic field. The ballistic mean free path (lb) of electrons is evaluated from the size dependence of the negative peak height. The estimated lb becomes 86 μm, which is approximately equal to a conventional mean free path calculated from carrier density and mobility of the wafer.

本文言語English
ページ(範囲)2672-2674
ページ数3
ジャーナルApplied Physics Letters
58
23
DOI
出版ステータスPublished - 1991 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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