Balanced electron drift oxide etcher with Xe added gas chemistry for low cost and high performance contact metallization

Hiroyuki Komeda, Masaki Hirayama, Yusuke Hirayama, Kazuhide Ino, Ryu Kaihara, Tadahiro Ohmi

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

A new plasma source called balanced electron drift (BED) magnetron plasma was developed for SiO2 contact/via hole etching. E×B drift of electrons, which is notorious for degrading the uniformity of magnetron plasmas, has been completely balanced by applying appropriate 100 MHz rf power to the upper ring electrode. As a result, highly uniform self bias voltage (ΔVdc<4 V) and ion flux (ΔJion<±3%) profiles were obtained on 200mm wafer. BED etcher has additional benefit of reducing dopant deactivation in the Si substrate due to the reduction in carbon implantation. Also, the addition of Xe having large mass number of 131 and large atomic radius of 2.17 angstrom has been confirmed to exhibit drastic suppression of the dopant deactivation, which results in low contact resistance without additional ion implantation after contact etch.

本文言語English
ページ(範囲)127-128
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1999 12 1
イベントProceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
継続期間: 1999 6 141999 6 16

ASJC Scopus subject areas

  • 電子工学および電気工学

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