Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures

Yutaka Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu

研究成果: Conference contribution

抄録

Atomistic structure of ZnSe needle-like nanowires on a ZnSe/GaAs(001) epitaxial layer, grown catalytically by means of molecular beam epitaxy operated at low temperatures (527 or 573 K), was studied. A nanowire was the zinc blende structure. The diameter at the top was in the range from 8 to 20 nm, and the length was about 200 nm. It was implied that the optical property differs from that of the bulk crystals, presumably due to the wire confinement effect.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
ページ115-116
ページ数2
DOI
出版ステータスPublished - 2007 12 1
外部発表はい
イベント28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
継続期間: 2006 7 242006 7 28

出版物シリーズ

名前AIP Conference Proceedings
893
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
国/地域Austria
CityVienna
Period06/7/2406/7/28

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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