Atomistic origin of high-concentration Ce3+ in {100}-faceted Cr-substituted CeO2 nanocrystals

Xiaodong Hao, Akira Yoko, Kazutoshi Inoue, Yang Xu, Mitsuhiro Saito, Chunrin Chien, Gimyeong Seong, Takaaki Tomai, Seiichi Takami, Alexander L. Shluger, Bingshe Xu, Tadafumi Adschiri, Yuichi Ikuhara

研究成果: Article査読

8 被引用数 (Scopus)


Improving the potential of promising CeO2-based nanocatalysts in practical applications requires an atomic-scale analysis of the effects of active dopants on the distribution of Ce valence states and the formation of oxygen vacancies (VOs). In this study, a Cr dopant is introduced into the cubic {100}-faceted CeO2 nanocrystals (NCs) with an average size of 7.8 nm via supercritical water. The Cr dopants substitute Ce sites in the amount of approximately 3 mol%. Based on the aberration-corrected STEM-EELS, the effects of Cr dopant on the distribution of cerium valence states are investigated layer by layer across the ultrafine Cr-substituted CeO2 NC perpendicular to the {100} exposed facet. It is found that an increased amount of Ce3+ cations is present in Cr-substituted CeO2 NCs, particularly in the internal atomic layers, compared to the pristine CeO2 NCs. The atomic-scale analysis of the local structure combined with theoretical calculations demonstrates that Cr dopant reduces the formation energy of VOs and increases the mobility of oxygen atoms for the nano-sized CeO2. These effects, in principle, result in an improved oxygen storage capacity and provide a fundamental understanding of role of the dopant in the formation and distribution of VOs in the doped CeO2 NCs.

ジャーナルActa Materialia
出版ステータスPublished - 2021 1月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • ポリマーおよびプラスチック
  • 金属および合金


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