Atomically Flat Si02/Si(00l) Interface Formation by UHV Annealing

Masaaki Niwa

研究成果: Article査読

抄録

Conventional wet cleaning and ultrahigh-vacuum (UHV)-annealed cleaning prior to thermal oxidation were compared with their effects on Si02/Si(00l) interface roughness. In comparison with the wet cleaned surfaces, atomically flat interfaces were obtained and the roughness was reduced to less than 0.1 nm in RMS for the UHV-annealed surfaces by annealing the surface at 1100°C in UHV (5 x 10-10Torr). This planarizatin was remarkable in the ultrathin oxide region (<~4nm).

本文言語English
ページ(範囲)903-908
ページ数6
ジャーナルShinku/Journal of the Vacuum Society of Japan
37
11
DOI
出版ステータスPublished - 1994

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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