Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET

R. Kuroda; Akinobu Teramoto; T. Suwa; R. Hasebe; X. Li; M. Konda; S. Sugawa; T. Ohmi

doi:10.1109/ESSDERC.2008.4681704

Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET

R. Kuroda, Akinobu Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, T. Ohmi

未来科学技術共同研究センター

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

Atomically flat silicon surface constructed with atomic terraces and steps is realized by pure argon ambience annealing at 1200°C on (100) crystal orientation large diameter wafers with precisely controlled tilt angle. Only the radical reaction based insulator formation technology such as oxidation utilizing oxygen radicals carried out at low temperature (400°C)can preserve the atomically flatness at the gate insulator film/silicon interface. CMOSFET having the atomically flat interface exhibit extremely lower 1/f noise and higher mobility characteristics with smaller electrical variation than those of CMOSFETs fabricated by the conventional technologies.

本文言語	English
ホスト出版物のタイトル	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
出版社	IEEE Computer Society
ページ	83-86
ページ数	4
ISBN（印刷版）	9781424423644
DOI	https://doi.org/10.1109/ESSDERC.2008.4681704
出版ステータス	Published - 2008
イベント	ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom 継続期間: 2008 9月 15 → 2008 9月 19

出版物シリーズ

名前	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

Other	ESSDERC 2008 - 38th European Solid-State Device Research Conference
国/地域	United Kingdom
City	Edinburgh, Scotland
Period	08/9/15 → 08/9/19

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

文献へのアクセス

10.1109/ESSDERC.2008.4681704

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フィンガープリント

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引用スタイル

Kuroda, R., Teramoto, A., Suwa, T., Hasebe, R., Li, X., Konda, M., Sugawa, S., & Ohmi, T. (2008). Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 83-86). [4681704] (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681704

Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET. / Kuroda, R.; Teramoto, Akinobu; Suwa, T. その他.

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. p. 83-86 4681704 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

研究成果: Conference contribution

Kuroda, R, Teramoto, A, Suwa, T, Hasebe, R, Li, X, Konda, M, Sugawa, S & Ohmi, T 2008, Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET. in ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference., 4681704, ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference, IEEE Computer Society, pp. 83-86, ESSDERC 2008 - 38th European Solid-State Device Research Conference, Edinburgh, Scotland, United Kingdom, 08/9/15. https://doi.org/10.1109/ESSDERC.2008.4681704

Kuroda R, Teramoto A, Suwa T, Hasebe R, Li X, Konda M その他. Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society. 2008. p. 83-86. 4681704. (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2008.4681704

Kuroda, R. ; Teramoto, Akinobu ; Suwa, T. その他. / Atomically flat gate insulator/silicon (100) interface formation introducing high mobility, ultra-low noise, and small characteristics variation CMOSFET. ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. pp. 83-86 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

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