Atomically flat aluminum-oxide barrier layers constituting magnetic tunnel junctions observed by in situ scanning tunneling microscopy

M. Mizuguchi, Y. Suzuki, T. Nagahama, S. Yuasa

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Observation using in situ scanning tunneling microscopy of the layers constituting a magnetic tunnel junction with a naturally oxidized aluminum barrier layer revealed an extremely flat aluminum-oxide surface. It was clarified from line-scan images that the aluminum-oxide barrier layer has atomic steps. This flatness, which is surprising given that the aluminum-oxide film is amorphous, reduced electron scattering within the barrier, leading to momentum-dependent tunneling, which should enable the fabrication of advanced devices, such as spin-polarized resonant tunneling transistors.

本文言語English
論文番号171909
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
87
17
DOI
出版ステータスPublished - 2005 10 24
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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