Atomically Controlled Technology for Future Si-Based Devices

Junichi Murota, Masao Sakuraba, Bernd Tillack

研究成果: Conference article査読

16 被引用数 (Scopus)

抄録

One of the main requirements for Si-based Ultrasmail device is atomic-order control of process technology. Here we show the concept of atomic-level processing based on atomic-order surface reaction control. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (SiH4, GeH4, NH3, PH3, CH4 and SiH3CH3) on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si or SiGe epitaxial growth over the N, P and B layer already-formed on Si(100) or SiGe(100) surface is achieved. It is found that higher level of electrical P atoms exist in such film, compared with doping under thermal equilibrium conditions. Furthermore, the capability of atomically controlled processing for doping of advanced devices with critical requirements for dose and location control is demonstrated for the base doping of SiGe:C heterojunction bipolar transistors (HBTs). These results open the way to atomically controlled technology for ultra-large-scale integrations.

本文言語English
ページ(範囲)607-616
ページ数10
ジャーナルSolid State Phenomena
95-96
出版ステータスPublished - 2004 1月 1
イベントGettering and Defect Engineering in Semiconductor Technology GADEST 2003: Proceedings of the 10th International Autumn Meeting - Brandenburg, Germany
継続期間: 2003 9月 212003 9月 26

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 材料科学(全般)
  • 凝縮系物理学

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