Atomically controlled processing for group IV semiconductors

Junichi Murota, Masao Sakuraba

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Moreover, Si or Si 1-xGe x epitaxial growth over N, P or C layer already-formed on Si(100) or Si 1-xGe x(100) surface is achieved and the capability of atomically controlled processing for advanced devices is demonstrated. Additionally, the strain control of the Si 1-xGe x/Si heterostructure due to stripe patterning is discussed.

本文言語English
ホスト出版物のタイトル2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
ページ111-120
ページ数10
1
DOI
出版ステータスPublished - 2009 12 1
イベント2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II - Xian, China
継続期間: 2009 7 52009 7 10

出版物シリーズ

名前ECS Transactions
番号1
22
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II
CountryChina
CityXian
Period09/7/509/7/10

ASJC Scopus subject areas

  • Engineering(all)

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