Atomically controlled processing for group IV semiconductors

Junichi Murota; Masao Sakuraba

doi:10.1149/1.3152967

Atomically controlled processing for group IV semiconductors

Junichi Murota, Masao Sakuraba

電気通信研究所・情報デバイス研究部門

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Moreover, Si or Si _1-xGe _x epitaxial growth over N, P or C layer already-formed on Si(100) or Si _1-xGe _x(100) surface is achieved and the capability of atomically controlled processing for advanced devices is demonstrated. Additionally, the strain control of the Si _1-xGe _x/Si heterostructure due to stripe patterning is discussed.

本文言語	English
ホスト出版物のタイトル	2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
ページ	111-120
ページ数	10
版	1
DOI	https://doi.org/10.1149/1.3152967
出版ステータス	Published - 2009 12 1
イベント	2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II - Xian, China 継続期間: 2009 7 5 → 2009 7 10

出版物シリーズ

名前	ECS Transactions
番号	1
巻	22
ISSN（印刷版）	1938-5862
ISSN（電子版）	1938-6737

Other

Other	2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II
Country	China
City	Xian
Period	09/7/5 → 09/7/10

ASJC Scopus subject areas

Engineering(all)

文献へのアクセス

10.1149/1.3152967

フィンガープリント「Atomically controlled processing for group IV semiconductors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Murota, J & Sakuraba, M 2009, Atomically controlled processing for group IV semiconductors. in 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT. 1 edn, ECS Transactions, no. 1, vol. 22, pp. 111-120, 2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II, Xian, China, 09/7/5. https://doi.org/10.1149/1.3152967

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