Atomically controlled plasma processing for group IV quantum heterostructure formation

Masao Sakuraba, Katsutoshi Sugawara, Junichi Murota

研究成果: Conference contribution

14 被引用数 (Scopus)

抄録

By low-temperature epitaxial growth of group IV semiconductors utilizing electron-cyclotron-resonance (ECR) plasma enhanced chemical vapor deposition (CVD), atomically controlled plasma processing has been developed in order to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, typical recent progress in plasma processing is reviewed as follows: (1) By N and B atomic-layer formation and subsequent Si epitaxial growth on Si(100) without substrate heating, heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in about a 2-nm-thick region of the atomic-layer doped Si film. (2) Using an 84 % relaxed Ge buffer layer formed on Si(100) by ECR plasma enhanced CVD, formation of a B-doped highly strained Si film with nanometer-order thickness was achieved and hole mobility enhancement as high as about 3 was observed in the highly strained Si film.

本文言語English
ホスト出版物のタイトルTechnology Evolution for Silicon Nano-Electronics
出版社Trans Tech Publications Ltd
ページ98-103
ページ数6
ISBN(印刷版)9783037850510
DOI
出版ステータスPublished - 2011

出版物シリーズ

名前Key Engineering Materials
470
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Atomically controlled plasma processing for group IV quantum heterostructure formation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル