Atomically controlled CVD technology for future Si-based devices

Junichi Murota, Masao Sakuraba, Bernd Tillack

研究成果: Paper査読

抄録

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si or SiGe epitaxial growth on N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, electrical characteristics of atomic-layer doped epitaxial films and the capability ol atomically controlled processing for doping of advanced devices are demonstrated. These results open the way to atomically controlled CVD technology for ultra-largescale integrations.

本文言語English
ページ53-66
ページ数14
出版ステータスPublished - 2005 12 1
イベント207th ECS Meeting - Quebec, Canada
継続期間: 2005 5 162005 5 20

Other

Other207th ECS Meeting
国/地域Canada
CityQuebec
Period05/5/1605/5/20

ASJC Scopus subject areas

  • 工学(全般)

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