One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here we show the concept of atomically controlled processing based on atomic-order surface reaction control. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge(100) are generalized based on the Langmuir-type model. Si or SiGe epitaxial growth on N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, electrical characteristics of atomic-layer doped epitaxial films and the capability ol atomically controlled processing for doping of advanced devices are demonstrated. These results open the way to atomically controlled CVD technology for ultra-largescale integrations.
|出版ステータス||Published - 2005 12 1|
|イベント||207th ECS Meeting - Quebec, Canada|
継続期間: 2005 5 16 → 2005 5 20
|Other||207th ECS Meeting|
|Period||05/5/16 → 05/5/20|
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