Atomically controlled CVD processing for future Si-based devices

Junichi Murota, Masao Sakuraba, Bernd Tillack

研究成果: Conference contribution

抄録

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of Si1-xGex it is suggested that nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms at the surface by heat-treatment. The B atomic-layer doping result suggests that atomic-order Si capping on the B atomic layer already-formed on (100) surface at low temperatures such as 180-300 °C improves the electrical activity even with the subsequent Si capping at 500 °C. Additionally, it is confirmed that the band engineering for group IV semiconductors becomes possible by the strain control of the Si1-xGex/Si heterostructure due to striped patterning. These results demonstrate the capability of the atomically controlled CVD processing approach for future Si-based devices.

本文言語English
ホスト出版物のタイトルICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ページ1312-1315
ページ数4
DOI
出版ステータスPublished - 2008
イベント2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
継続期間: 2008 10月 202008 10月 23

出版物シリーズ

名前International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
国/地域China
CityBeijing
Period08/10/2008/10/23

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料

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