Atomically controlled CVD processing for doping in future Si-based devices

Junichi Murota, Masao Sakuraba, Bernd Tillack

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

By atomic layer formation of B or P on Si1-xGex(100) surface and subsequent Si capping layer deposition, heavy atomic-layer doping is achieved at temperatures below 500°C B doping dose of about 7×10 14 cm-2 is confined within an about 1 nm thick region, but the sheet carrier concentration is as low as 1.7 ×1013 cm -2. The in-situ B doping in tensile-strained Si epitaxial growth suggests that the low electrical activity is caused by B clustering as well as the increase of interstitial B atoms. For unstrained Si cap layer grown on top of the P atomic layer formed on Si1-xGex(100) with P atom amount below about 4×1014 cm-2 using Si 2H6 instead of SiH4, it is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P amount around the heterointerface. The electrical inactive P atoms are generated by tensile-strain in heavy P doped region. These results demonstrate that atomically controlled processing for doping is influenced by strain.

本文言語English
ホスト出版物のタイトル2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
出版社Electrochemical Society Inc.
ページ181-188
ページ数8
1
ISBN(電子版)9781607682516
ISBN(印刷版)9781607682523
DOI
出版ステータスPublished - 2011
イベント3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III - Hong Kong, China
継続期間: 2011 6月 272011 7月 1

出版物シリーズ

名前ECS Transactions
番号1
37
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other3rd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT III
国/地域China
CityHong Kong
Period11/6/2711/7/1

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Atomically controlled CVD processing for doping in future Si-based devices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル