Atomic structure of SiO2 at SiO2/Si interfaces

K. Hirose, H. Nohira, K. Sakano, T. Hattori

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The valence-band and O 2s core-level spectra of ultrathin (about 1 nm) SiO2 layers formed in the initial stages of the oxidation of Si(100) substrates were measured by high-resolution X-ray photoelectron spectroscopy (XPS), and the energy difference between the bonding states in the valence-band and the core-level was found to be larger than the corresponding difference for the bulk SiO2. The energy difference between the top of the valence-band and the core-level was also found to be larger than that for the bulk SiO2. From the first-principle molecular orbital (MO) calculations for SiO2 model clusters, (Si5O16H12), it was concluded that the atomic structure of SiO2 at the SiO2/Si interfaces is characterized by a narrow intertetrahedral bond angle, about 135°.

本文言語English
ページ(範囲)455-459
ページ数5
ジャーナルApplied Surface Science
166
1
DOI
出版ステータスPublished - 2000 10月 9
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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