抄録
The initial homoepitaxial growth of SrTiO3 on a (√13 × √13)-R33.7° SrTiO3(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (√13 × √13) atomic structure is clearly visualized on the deposited SrTiO3 film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (√13 × √13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO3 substrates can be applied to the fabrication of atom-by-atom controlled oxide epitaxial films and heterostructures.
本文言語 | English |
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ページ(範囲) | 7967-7971 |
ページ数 | 5 |
ジャーナル | ACS Nano |
巻 | 5 |
号 | 10 |
DOI | |
出版ステータス | Published - 2011 10月 25 |
ASJC Scopus subject areas
- 材料科学(全般)
- 工学(全般)
- 物理学および天文学(全般)