Atomic-scale Ti3SiC2 bilayers embedded in SiC: Formation of point Fermi surface

Zhongchang Wang, Susumu Tsukimoto, Rong Sun, Mitsuhiro Saito, Yuichi Ikuhara

    研究成果: Article査読

    8 被引用数 (Scopus)

    抄録

    Semiconductor heterostructures provide a fertile ground for fascinating physical behaviors that are not present in their respective bulk constituents. Here we demonstrate, by combining advanced transmission electron microscopy with atomistic first-principles calculations, that an atomic-scale Ti3 SiC2 -like bilayer can be embedded in SiC interior, forming an atomically ordered multilayer that exhibits an unexpected electronic state with point Fermi surface. The valence charge is confined largely to within the bilayer in a spatially connected manner, serving possibly as a conducting channel to enhance the current flow over the semiconductor. Such a heterostructure with unusual properties is mechanically robust, rendering its patterning for technological applications likely.

    本文言語English
    論文番号104101
    ジャーナルApplied Physics Letters
    98
    10
    DOI
    出版ステータスPublished - 2011 3月 7

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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