Atomic-scale assessment of the crystallization onset in silicon carbonitride

Gabriela Mera, Ryo Ishikawa, Emanuel Ionescu, Yuichi Ikuhara, Ralf Riedel

    研究成果: Article査読

    12 被引用数 (Scopus)

    抄録

    Within the present study, atomic-scale electron microscopy investigation on the crystallization behavior of polysilylcarbodiimide-derived SiCN was performed. The as-prepared SiCN sample was found to be homogeneous and consisted of amorphous silicon nitride nano-domains dispersed within an amorphous, highly entangled graphene-like carbon matrix. Annealing of the sample at 1400°C induced a slight increase of the ordering of the carbon phase. Additionally, the crystallization onset of the silicon nitride has been observed for the first time. In the sample annealed at 1400°C small nano-clusters with average sizes of 0.8, 1.5 and 2.1nm (consisting of 30, 180 and 570 atoms, respectively; corresponding to Si12N18, Si72N108 and Si228N342) were imaged and assigned to α-silicon nitride. The crystallization of the amorphous silicon nitride phase into α-Si3N4 is thought to occur via diffusion of Si and N, which rely on the presence of large number of dangling bonds in the amorphous SiCN sample.

    本文言語English
    ページ(範囲)3355-3362
    ページ数8
    ジャーナルJournal of the European Ceramic Society
    35
    12
    DOI
    出版ステータスPublished - 2015 10 1

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Materials Chemistry

    フィンガープリント 「Atomic-scale assessment of the crystallization onset in silicon carbonitride」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル