One of the main requirements for nanoscaling and nanotechnology is atomic-order control of process technology for device fabrication. Here we show the concept of atomic-level processing based on atomic-order surface reaction control. This concept is demonstrated for Si-based group IV heterodevices, which are becoming increasingly attractive as high-speed devices for telecommunication. The main idea of the atomic layer approach is the separation of the surface adsorption of reactant gases from the reaction process. By this way the process is controlled by the surface adsorption equilibrium only. Self-limiting processes at atomic level and very low process temperature (even room temperature) are reached. Atomic level control is shown for P, B, and C doping.
|出版ステータス||Published - 2004 12 1|
|イベント||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
継続期間: 2004 10 3 → 2004 10 8
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||04/10/3 → 04/10/8|
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