Atomic-layer surface reaction of SiH4 on Ge(100)

Takeshi Watanabe, Masao Sakuraba, Takashi Matsuura, Junichi Murota

研究成果: Article査読

28 被引用数 (Scopus)

抄録

The single atomic layer growth process of Si on a Ge(100) surface using SiH4 has been investigated by ultraclean cold-wall low-pressure chemical vapor deposition (CVD). Self-limiting reaction of SiH4 on the Ge surface was found at 260°C and the reaction step can be explained by Langmuir-type kinetics. The saturated surface concentration of Si atoms depends on the preheating conditions. A single atomic layer was found for preheating at 350°C in Ar and at 260°C in H2. However, in the case of preheating in H2 at 350°C, the Si atom concentration hardly reached that of a single atomic layer. Reflection high-energy electron diffraction (RHEED) and Fourier-transform infrared reflection adsorption spectroscopy (FTIR/RAS) observations showed that a H-terminated dimer structure was formed on the Ge(100) surface after preheating in H2 at 350°C. The density of the SiH4 reaction sites on the H-terminated surface with the dimer structure is considered to be lower than that of the H-terminated unreconstructed surface and the H-free surface.

本文言語English
ページ(範囲)4042-4045
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
6 SUPPL. B
出版ステータスPublished - 1997 6 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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