Atomic layer epitaxy processes of ZnSe on GaAs(0 0 1) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)

Akihiro Ohtake, Takashi Hanada, Kenta Arai, Takuji Komura, Shiro Miwa, Kozo Kimura, Tetsuji Yasuda, Chengguo Jin, Takafumi Yao

研究成果: Conference article査読

7 被引用数 (Scopus)

抄録

Atomic layer epitaxy (ALE) processes of ZnSe on GaAs(0 0 1) have been studied by using reflection high-energy electron diffraction and total-reflection-angle X-ray spectroscopy in real time. We have obtained direct evidence that the growing film of ZnSe(0 0 1) changes its surface chemical composition during ALE growth, which corresponds to the alternate formation of the Se-stabilized (2×1) and Zn-stabilized c(2×2) reconstructions. The growth rate of ZnSe has been estimated to be about 0.5 BL per ALE cycle, which can be consistent with the previously proposed structure models for these reconstructed surfaces.

本文言語English
ページ(範囲)490-493
ページ数4
ジャーナルJournal of Crystal Growth
201
DOI
出版ステータスPublished - 1999 5月
イベントProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
継続期間: 1998 8月 311998 9月 4

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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「Atomic layer epitaxy processes of ZnSe on GaAs(0 0 1) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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