TY - JOUR
T1 - Atomic layer epitaxy processes of ZnSe on GaAs(0 0 1) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)
AU - Ohtake, Akihiro
AU - Hanada, Takashi
AU - Arai, Kenta
AU - Komura, Takuji
AU - Miwa, Shiro
AU - Kimura, Kozo
AU - Yasuda, Tetsuji
AU - Jin, Chengguo
AU - Yao, Takafumi
N1 - Funding Information:
This study, partly supported by New Energy and Industrial Technology Development Organization, was performed at JRCAT under the research agreement between NAIR and ATP.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999/5
Y1 - 1999/5
N2 - Atomic layer epitaxy (ALE) processes of ZnSe on GaAs(0 0 1) have been studied by using reflection high-energy electron diffraction and total-reflection-angle X-ray spectroscopy in real time. We have obtained direct evidence that the growing film of ZnSe(0 0 1) changes its surface chemical composition during ALE growth, which corresponds to the alternate formation of the Se-stabilized (2×1) and Zn-stabilized c(2×2) reconstructions. The growth rate of ZnSe has been estimated to be about 0.5 BL per ALE cycle, which can be consistent with the previously proposed structure models for these reconstructed surfaces.
AB - Atomic layer epitaxy (ALE) processes of ZnSe on GaAs(0 0 1) have been studied by using reflection high-energy electron diffraction and total-reflection-angle X-ray spectroscopy in real time. We have obtained direct evidence that the growing film of ZnSe(0 0 1) changes its surface chemical composition during ALE growth, which corresponds to the alternate formation of the Se-stabilized (2×1) and Zn-stabilized c(2×2) reconstructions. The growth rate of ZnSe has been estimated to be about 0.5 BL per ALE cycle, which can be consistent with the previously proposed structure models for these reconstructed surfaces.
UR - http://www.scopus.com/inward/record.url?scp=0032633341&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032633341&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(98)01383-9
DO - 10.1016/S0022-0248(98)01383-9
M3 - Conference article
AN - SCOPUS:0032633341
VL - 201
SP - 490
EP - 493
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -