Atomic-layer doping in Si by alternately supplied NH3 and SiH4

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

研究成果: Article査読

32 被引用数 (Scopus)

抄録

The low-temperature Si growth on the atomic-layer order nitrided Si surface with N amount of 1-6×1014 cm-2 formed by NH3 reaction at 400°C was discussed. It was suggested that crystallinity of Si film deposited on the atomic-layer order nitrided Si was degraded by the existence of Si3N4 structure. The depth profile of N atomic-layer doped Si film was found to showed that the N atoms were confined with about 1-nm-thick region.

本文言語English
ページ(範囲)3472-3474
ページ数3
ジャーナルApplied Physics Letters
82
20
DOI
出版ステータスPublished - 2003 5 19

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Atomic-layer doping in Si by alternately supplied NH<sub>3</sub> and SiH<sub>4</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル