Atomic layer deposition of SiO2 for the performance enhancement of fin field effect transistors

Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxun Liu, Shin Ichi O'Uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Atomic layer deposition (ALD) of SiO2 by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the BEMAS precursor. As a result, FinFETs with a 25-nm-long extension of the source/drain using the ALD grown SiO2 sidewall spacer have been successfully fabricated. The performance of the FinFET has been successfully improved by reduction of the parasitic resistance.

本文言語English
論文番号116503
ジャーナルJapanese journal of applied physics
52
11 PART 1
DOI
出版ステータスPublished - 2013 11月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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