Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxum Liu, Shin Ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We have successfully fabricated FinFETs with a 25-nm-short extension of the source/drain by using atomic layer deposition of SiO2 thin films for the side-wall spacer of the gate electrode. The performance of the FinFET has been successfully improved by the reduction of the parasitic resistance.

本文言語English
ホスト出版物のタイトルESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
ページ83-86
ページ数4
DOI
出版ステータスPublished - 2011 12 12
外部発表はい
イベント41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
継続期間: 2011 9 122011 9 16

出版物シリーズ

名前European Solid-State Device Research Conference
ISSN(印刷版)1930-8876

Other

Other41st European Solid-State Device Research Conference, ESSDERC 2011
CountryFinland
CityHelsinki
Period11/9/1211/9/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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