Atomic layer control of germanium and silicon on silicon using flash heating in ultraclean chemical vapor deposition

Masao Sakuraba, Junichi Murota, Nobuo Mikoshiba, Shoichi Ono

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

The separation between surface adsorption and reaction of reactant gas on Si substrate was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. Using GeH4 gas, single atomic layer epitaxy of Ge per flash lamp light shot has been realized for some process conditions. It is proposed that the total adsorption site density is nearly equal to the surface atom density, and continuous Ge-hydride adsorption is inhibited on the surface covered with an adsorbed Ge-hydride monolayer. Using SiH4 and Si2H6, atomic layer deposition control of Si was also examined.

本文言語English
ページ147-149
ページ数3
DOI
出版ステータスPublished - 1991
イベント23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
継続期間: 1991 8 271991 8 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • 工学(全般)

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