Atomic-layer adsorption of P on Si(100) and Ge(100) at 200-750 °C by PH3 was investigated using an ultraclean low-pressure chemical vapor deposition (CVD) system. At 300 °C, the PH3 adsorption was suppressed on the H-terminated Si surface, but PH3 was adsorbed dissociatively on the H-free Si surface with saturation tendency to subatomic layer. At 450-750 °C, the P atom concentration on the Si surface tended to saturate to about two or three atomic layers by exposing PH3 with little influence of the carrier gas (H2 or He). When the P-adsorbed Si was kept in Ar and in H2 at 650 °C after PH3 exposure, the P atom concentration decreased to about one atomic layer by thermal desorption and also by reduction due to hydrogen. On the Ge surface, PH3 adsorption was suppressed by H-termination at 200 °C, P atom concentration saturated to the single atomic layer at 300-450 °C. Furthermore, P desorption from the Ge surface at 450 °C occurred much faster than that from the Si surface at 650 °C, while P bonded to Ge was stable at 300 °C.
|ジャーナル||Applied Surface Science|
|出版ステータス||Published - 2000 8 1|
|イベント||5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France|
継続期間: 1999 7 6 → 1999 7 9
ASJC Scopus subject areas
- 化学 (全般)