Atomic hydrogen chemisorption on Si(100)(2 X 1) studied by FI-STM

Xiang Dong Wang, H. Lu, T. Hashizume, H. W. Pickering, T. Sakurai

    研究成果: Article査読

    9 被引用数 (Scopus)

    抄録

    A field ion-scanning tunneling microscopy study on hydrogen chemisorption on the Si(100)(2 X 1) surface is presented. At low coverages, hydrogen atoms reside singly on top of the dimerised Si atoms, and are imaged brightly. The hydrogen chemisorption induces buckling of dimers, indicating the strong bonding between Si and H atoms. With increasing coverage, both the (2 X 1) monohydride and (1 X 1) dihydride phases were formed. The former is imaged dark compared with the unreacted Si dimers, due to the reduction of the density of electronic states near the Fermi level. Surface etching was also observed. It was found that the corrosion of the surface is modest in the monohydride phase, while during the formation of the dihydride phase, the corrosion becomes significant. The behavior of hydrogen desorption from the dihydride and monohydride phases was investigated as a function of annealing temperature. Our STM results support the mechanism that the desorbing H2 molecules are formed by combination of two hydrogen atoms forming the dihydride phase. Upon annealing at elevated temperatures, the Si overlayer stripes are formed by desorption of hydrogen from the etching products and the rearrangement of the Si atoms.

    本文言語English
    ページ(範囲)266-274
    ページ数9
    ジャーナルApplied Surface Science
    67
    1-4
    DOI
    出版ステータスPublished - 1993 4 2

    ASJC Scopus subject areas

    • 化学 (全般)
    • 凝縮系物理学
    • 物理学および天文学(全般)
    • 表面および界面
    • 表面、皮膜および薄膜

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