Atomic dipole moment distribution of Si atoms on a Si(111)-(7×7) surface studied using noncontact scanning nonlinear dielectric microscopy

Yasuo Cho, Ryusuke Hirose

研究成果: Article査読

43 被引用数 (Scopus)

抄録

A local atomic electric dipole moment distribution of Si atoms on Si(111)-(7×7) surface is clearly resolved by using a new technique called noncontact scanning nonlinear dielectric microscopy. The dc-bias voltage dependence of the atomic dipole moment on the Si(111)-(7×7) surface is measured. At the weak applied voltage of -0.5V, a positive dipole moment is detected on the Si adatom sites, whereas a negative dipole moment is observed at the interstitial sites of inter Si adatoms. Moreover, the quantitative dependence of the surface dipole moment as a function of the applied dc voltage is also revealed at a fixed point above the sample surface. This is the first successful demonstration of direct atomic dipole moment observation achieved in the field of capacitance measurement.

本文言語English
論文番号186101
ジャーナルPhysical Review Letters
99
18
DOI
出版ステータスPublished - 2007 11 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Atomic dipole moment distribution of Si atoms on a Si(111)-(7×7) surface studied using noncontact scanning nonlinear dielectric microscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル