Atomic diffusion bonding with thin nanocrystalline metal films in vacuum and in an inert gas

研究成果: Conference contribution

抄録

Atomic diffusion bonding (ADB) of two flat wafers in an inert gas with thin metal films was studied. Its performance was compared to that of ADB "in vacuum." Results suggest that ADB can be conducted in Ar gas using almost any metal film, as is true also for bonding in vacuum.

本文言語English
ホスト出版物のタイトルProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
ページ数1
DOI
出版ステータスPublished - 2012 8 15
イベント2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
継続期間: 2012 5 222012 5 23

出版物シリーズ

名前Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Other

Other2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
国/地域Japan
CityTokyo
Period12/5/2212/5/23

ASJC Scopus subject areas

  • コンピュータ グラフィックスおよびコンピュータ支援設計
  • コンピュータ ビジョンおよびパターン認識

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