Atomic diffusion bonding of Si wafers using thin Nb films

Miyuki Uomoto, Takehito Shimatsu

研究成果: Article査読

1 被引用数 (Scopus)

抄録

This study of atomic diffusion bonding of Si wafers in vacuum using thin Nb films reveals remarkably high bonding strength, greater than fracture strength of a Si wafer, obtained using Nb films at thicknesses of 1.7-20 nm on each side. Transmission electron microscopic cross-section images show no vacancy at the bonded interface. Particularly, crystal lattice rearrangement occurs to a remarkable degree at the bonded interface of 10 nm thick Nb films. Surface roughness reduction is likely to enhance the crystal lattice rearrangement at the bonded interface, even with thick Nb films.

本文言語English
論文番号SBBC04
ジャーナルJapanese journal of applied physics
59
SB
DOI
出版ステータスPublished - 2020 2月 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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