Atomic diffusion bonding in air using Ag films

Yuki Watabe, Fuki Goto, Miyuki Uomoto, Takehito Shimatsu

研究成果: Article査読

抄録

Atomic diffusion bonding (ADB) of wafers at room temperature in air was studied using Ag films. Using an ultra-high vacuum magnetron sputtering system, Ag (20 nm) films with Ti (5 nm) underlayers were deposited. The propagation speed of crystal lattice rearrangement in the bonding process decreased with an increased exposure time of film surfaces to air (t exp). Propagation did not occur at t exp of 500 s. The cohesion of Ag film surfaces by film surface exposure to air and reduction of the Ag film surface energy by Ag oxide or sulfide formation probably cause ADB performance degradation.

本文言語English
論文番号SF1003
ジャーナルJapanese journal of applied physics
61
SE
DOI
出版ステータスPublished - 2022 6月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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