Atomic diffusion bonding for optical devices with high optical density

G. Yonezawa, Y. Takahashi, Y. Sato, S. Abe, M. Uomoto, T. Shimatsu

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

An inorganic bonding method providing 100% light transmittance at the bonded interface was proposed for fabricating devices with high optical density. First, we fabricated 5000 run-thick SiO2 oxide underlayers on synthetic quartz glass wafers. After the film surfaces were polished to reduce surface roughness, the wafers with oxide underlayers were bonded using thin Ti films in vacuum at room temperature as a usual atomic diffusion process. After post annealing at 300 °C, 100% light transmittance at the bonded interface with the surface free energy at the bonded interface greater than 2 J/m2 was achieved. Dissociated oxygen from oxide layers probably enhanced Ti films oxidation, resulting in high light transmittance with high bonding strength attributable to the annealing. Using this bonding process, we fabricated a polarizing beam splitter and demonstrated that this bonding process is useful to fabricate devices with high optical density.

本文言語English
ホスト出版物のタイトルECS Transactions
編集者C.S. Tan, T. Suga, H. Baumgart, F. Fournel, M. Goorsky, K.D. Hobart, R. Knechtel
出版社Electrochemical Society Inc.
ページ233-245
ページ数13
5
ISBN(電子版)9781607688518
ISBN(印刷版)9781510871656
DOI
出版ステータスPublished - 2018
イベントSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2018 9 302018 10 4

出版物シリーズ

名前ECS Transactions
番号5
86
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
国/地域Mexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • 工学(全般)

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