Atom probe tomography of nanoscale electronic materials

D. J. Larson, T. J. Prosa, D. E. Perea, K. Inoue, D. Mangelinck

研究成果: Article査読

12 被引用数 (Scopus)

抄録

As the characteristic length scale of electronic devices shrinks, so does the required scale for measurement techniques to provide useful feedback during development and fabrication. The current capabilities of atom probe tomography (APT), such as detecting a low number of dopant atoms in nanoscale devices or studying diffusion effects in a nanowire (NW), make this technique important for metrology on the nanoscale. Here we review recent APT investigations applied to transistors (including regions such as gate oxide, channel, source, drain, contacts, etc.), heterogeneous dopant incorporation in NWs, and Pt-based nanoparticles.

本文言語English
ページ(範囲)30-34
ページ数5
ジャーナルMRS Bulletin
41
1
DOI
出版ステータスPublished - 2016 1 8

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 物理化学および理論化学

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