Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28 / Si30isotope superlattices with sub-nanometer spatial resolution

Yasuo Shimizu, Yoko Kawamura, Masashi Uematsu, Kohei M. Itoh, Mitsuhiro Tomita, Mikio Sasaki, Hiroshi Uchida, Mamoru Takahashi

研究成果: Article査読

32 被引用数 (Scopus)

抄録

Laser-assisted atom probe microscopy of 2 nm period Si28 / Si30isotope superlattices (SLs) is reported. Three-dimensional distributions of Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

本文言語English
論文番号076102
ジャーナルJournal of Applied Physics
106
7
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント 「Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si<sup>28</sup> / Si<sup>30</sup>isotope superlattices with sub-nanometer spatial resolution」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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