Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection

Taiichi Otsuji, Takayuki Watanabe, Stephane Boubanga-Tombet, Tetsuya Suemitsu, Dominique Coquillat, Wojciech Knap, Denis Fateev, Vyacheslav Popov

研究成果: Conference contribution

抄録

This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.

本文言語English
ホスト出版物のタイトル2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
DOI
出版ステータスPublished - 2013 8 26
イベント2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe, Japan
継続期間: 2013 5 192013 5 23

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

Other

Other2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
CountryJapan
CityKobe
Period13/5/1913/5/23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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