Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection

Stephane Boubanga-Tombet, Yudai Tanimoto, Takayuki Watanabe, Tetsuya Suemitsu, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Vyacheslav Popov, Taiichi Otsuji

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We report terahertz detectors with a record sensitivity of 6.4 kV/W and noise equivalent power of 15 pW/√Hz in the above 1 THz region. The key point of this major breakthrough is careful design and fabrication of Plasmonic devices based on Field Effect Transistor structures combining interdigitated metal gates and an asymmetric metallization scheme.

本文言語English
ホスト出版物のタイトルIRMMW-THz 2012 - 37th International Conference on Infrared, Millimeter, and Terahertz Waves
DOI
出版ステータスPublished - 2012 12 1
イベント37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012 - Wollongong, NSW, Australia
継続期間: 2012 9 232012 9 28

出版物シリーズ

名前International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN(印刷版)2162-2027
ISSN(電子版)2162-2035

Other

Other37th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2012
CountryAustralia
CityWollongong, NSW
Period12/9/2312/9/28

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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