Asymmetric distribution of charge trap in HfO2-based high-k gate dielectrics

K. Higuchi, T. Naito, A. Uedono, K. Shiraishi, K. Torii, M. Boero, T. Chikyow, S. Yamasaki, K. Yamada, R. Hasunuma, K. Yamabe

研究成果: Conference article査読


The time-dependences of leakage currents by electrons and holes flowing through HfO2-based high-k gate dielectric films under constant voltage stresses are investigated by a carrier separation method using field-effect transistor structures. The ratio of the electron current to the hole current depended on gate voltage and the type of transistors. In the case of unbalanced charge injection, the trapping of the major leakage current carriers controlled the time dependence of both leakage currents. However, in the case of balanced injection, some of the injected electrons were trapped near the gate, while some of the injected holes were trapped near the substrate, giving rise to the both current reduction. As a result, both leakage currents reduced. Capacitance change during the relaxation after the removal of the gate voltage stress was consistent with the leakage current change. The relationship between the electron-/hole-trapping centers and oxygen-related defects in high-k dielectric films is discussed. copyright The Electrochemical Society.

ジャーナルECS Transactions
出版ステータスPublished - 2005 12 1
イベント3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
継続期間: 2005 10 162005 10 21

ASJC Scopus subject areas

  • Engineering(all)

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