Arsenic Doping of Chemical Vapor Deposited Polycrystalline Silicon Using SiH4-H2 -AsH3 Gas System

Junichi Murota, Eisuke Arai, Kiyoshi Kudo

研究成果: Article査読

8 被引用数 (Scopus)


The arsenic concentration (CAs) in polycrystalline silicon (poly-Si) deposited under various deposition conditions in the deposition temperature range 670°-760°C using SiH4-H2-AsH3 gas system has been determined by neutron activation analysis. From the experimental results, it was found that CAS increases with decreasing deposition temperature and with increasing partial pressure of AsH3 in the gas introduced into the reactor (PAsH3(i)), and that for lower PASH3(I) region, CAS decreases with decreasing gas velocity and with increasing deposition rate, and for higher PAsH3(i) region, CAs is independent of gas velocity and deposition rate. Prom the analyses of the experimental data, it was suggested that (i) for lower PAsH3(i) region, CAs is limited by the diffusion of As-containing species, such as As molecule, Asa molecule, and As4 molecule, in the stagnant layer formed by gas stream, and for higher PASH3″(I) region, CAS is controlled by the surface reaction; (ii) monatomic As existing at wafer surface is incorporated in poly-Si in accordance with Henry's law; (iii) the transfer coefficient of As atoms in gas phase increases slightly with increasing deposition temperature and gas velocity; (iv) the segregation coefficient of monatomic As between gas phase and poly-Si (m) is approximated by m = 1.5 X 10* exp (-71.5 kcal/mole/RT); (u) the energy of As-Si bond is 44.5 kcal/mole.

ジャーナルJournal of the Electrochemical Society
出版ステータスPublished - 1980

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学


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