Ar plasma irradiation effects in atomically controlled Si epitaxial growth

Daisuke Muto, Masao Sakuraba, Takuya Seino, Junichi Murota

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Effect of Ar plasma on the quality of atomic layer-by-layer Si epitaxial growth on Si(100) is investigated using the electron-cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. Adsorbed SiH 4 molecules on monohydride Si(100) are effectively decomposed and form Si epitaxial film under the Ar plasma irradiation with the maximum and peak ion energies of 7 and 1-2eV, respectively. As a result, atomic layer-by-layer control of Si epitaxial growth at a lower temperature below 100°C is achieved by alternate exposure of Si(100) to SiH 4 and Ar plasma. The plasma exposure also induces Ar incorporation in the film, and it is suggested that lowering the incorporated Ar amount below 2×10 21 cm -3 is necessary to avoid degradation in crystallinity.

本文言語English
ページ(範囲)210-214
ページ数5
ジャーナルApplied Surface Science
224
1-4
DOI
出版ステータスPublished - 2004 3 15

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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