Applied voltage and temperature dependence of tunneling magnetoresistance

N. Tezuka, M. Oogane, T. Miyazaki

研究成果: Conference article査読

17 被引用数 (Scopus)

抄録

The dependence of tunnel magnetoresistance (TMR) ratio on temperature and applied voltage has been studied for Fe/Al-oxide/Fe and 80NiFe/Al-oxide/Co junctions. Their dependence for an Fe/Al-oxide/Fe junction is greater than that for a 80NiFe/Al-oxide/Co junction. The rapid decrease of TMR ratio with increasing temperature for the Fe/Al-oxide/Fe junction below 100 K or 10 mV and small decrease below about 40 K for the 80NiFe/Al-oxide/Co junction can be explained by the spin flip scattering due to magnetic impurities.

本文言語English
ページ(範囲)149-151
ページ数3
ジャーナルJournal of Magnetism and Magnetic Materials
198
DOI
出版ステータスPublished - 1999 6月 1
イベントProceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
継続期間: 1998 6月 141998 6月 19

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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