The magnetic properties of Ga1-xMnxN in both bulk and thin film forms were studied. It was shown that Mn atoms, which couple ferromagnetically in bulk Ga1-xMnxN, couple antiferromagnetically on its surface. First principles calculations based on density functional theory were used for the purpose of analysis. It was found that the change in magnetic behavior is brought about by a contraction of the Mn-Mn and Mn-N bond lengths.
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