Anomalous pressure-temperature-dependent Hall constants in CeP and Yb4As3

N. Môri, Y. Okayama, Y. Okunuki, Y. Haga, Akira Ochiai, T. Suzuki

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The Hall coefficient of CeP is found to change in sign from negative to positive with increasing pressure. This result clearly indicates the fact that there exists a successive electronic transition from a dense Kondo to a normal metal through a mixed-valence state. For Yb4As3, the huge peak in the temperature-dependent Hall coefficient is found to decrease with increasing pressure. This result indicates that the anomalous temperature-dependent resistivity is primarily caused by the carrier concentration depending strongly on temperature.

本文言語English
ページ(範囲)548-550
ページ数3
ジャーナルPhysica B: Physics of Condensed Matter
199-200
C
DOI
出版ステータスPublished - 1994 4月 2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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