Anomalous Nernst effect of Fe3 O4 single crystal

R. Ramos, M. H. Aguirre, A. Anadón, J. Blasco, I. Lucas, K. Uchida, P. A. Algarabel, L. Morellón, E. Saitoh, M. R. Ibarra

研究成果: Article査読

58 被引用数 (Scopus)

抄録

We report a complete characterization of the anomalous Nernst effect (ANE) and its relationship with the anomalous Hall effect (AHE) in Fe3O4. By combining full thermoelectric and electric transport measurements as a function of temperature, we have verified that the universal scaling relation between the anomalous Hall and diagonal conductivities (σzy σzz1.6), observed in materials with bad-metal-hopping type of conduction, is also applicable to the thermoelectric transport. We further show that the ANE and AHE are commonly related through the Mott relation, therefore demonstrating its validity for anomalous transport phenomena in materials with conduction in the the dirty regime.

本文言語English
論文番号054422
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
90
5
DOI
出版ステータスPublished - 2014 8 26
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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