抄録
The differential resistance in an InAs-inserted-channel InAlAs/InGaAs heterostructure coupled superconducting junction is enhanced within the Nb superconducting gap energy by applying a magnetic field. The enhancement saturates under a magnetic field of several mT. This behavior suggests that the pair-potential in the InAs-channel is induced by the superconducting proximity effect. The magnetic field reduces the penetration of the pair-potential and the Andreev reflection probability, which causes the enhancement of the differential resistance.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1757-1758 |
| ページ数 | 2 |
| ジャーナル | Physica B: Physics of Condensed Matter |
| 巻 | 194-196 |
| 号 | PART 2 |
| DOI | |
| 出版ステータス | Published - 1994 2月 2 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学