Anomalous magnetic field dependence of differential resistance in a superconducting NbInAsNb junction

Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The differential resistance in an InAs-inserted-channel InAlAs/InGaAs heterostructure coupled superconducting junction is enhanced within the Nb superconducting gap energy by applying a magnetic field. The enhancement saturates under a magnetic field of several mT. This behavior suggests that the pair-potential in the InAs-channel is induced by the superconducting proximity effect. The magnetic field reduces the penetration of the pair-potential and the Andreev reflection probability, which causes the enhancement of the differential resistance.

本文言語English
ページ(範囲)1757-1758
ページ数2
ジャーナルPhysica B: Physics of Condensed Matter
194-196
PART 2
DOI
出版ステータスPublished - 1994 2月 2
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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