Anodic oxide gate a-Si:H MOSFET

H. Yamamoto; T. Sawada; S. Arimoto; H. Hasegawa; H. Ohno

doi:10.1049/el:19830413

Anodic oxide gate a-Si:H MOSFET

H. Yamamoto, T. Sawada, S. Arimoto, H. Hasegawa, H. Ohno

研究成果: Article › 査読

6 被引用数 (Scopus)

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The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al₂O₃ native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm²/Vs after proper low-temperature annealing in H₂. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.

本文言語	English
ページ（範囲）	607-608
ページ数	2
ジャーナル	Electronics Letters
巻	19
号	16
DOI	https://doi.org/10.1049/el:19830413
出版ステータス	Published - 1983 8月 4
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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title = "Anodic oxide gate a-Si:H MOSFET",

abstract = "The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.",

keywords = "Anodic oxidation, Hydrogenated amorphous silicon, Semiconducting devices and materials",

author = "H. Yamamoto and T. Sawada and S. Arimoto and H. Hasegawa and H. Ohno",

year = "1983",

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doi = "10.1049/el:19830413",

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T1 - Anodic oxide gate a-Si:H MOSFET

AU - Yamamoto, H.

AU - Sawada, T.

AU - Arimoto, S.

AU - Hasegawa, H.

AU - Ohno, H.

PY - 1983/8/4

Y1 - 1983/8/4

N2 - The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.

AB - The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.

KW - Anodic oxidation

KW - Hydrogenated amorphous silicon

KW - Semiconducting devices and materials

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DO - 10.1049/el:19830413

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VL - 19

SP - 607

EP - 608

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 16

ER -

Anodic oxide gate a-Si:H MOSFET

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