Annealing properties of open volumes in HfSiO x and HfAlO x gate dielectrics studied using monoenergetic positron beams

A. Uedono, K. Ikeuchi, K. Yamabe, T. Ohdaira, M. Muramatsu, R. Suzuki, A. S. Hamid, T. Chikyow, K. Torii, K. Yamada

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Thin Hf0.6Si0.4Ox and Hf0.3Al0.7Ox films fabricated by metal-organic chemical-vapor deposition and atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positions indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. For HfSiOx, the mean size of the open volumes and their size distribution decreased with increasing postdeposition annealing (PDA) temperature. For HfAlOx, although the overall behavior of the open volumes in response to annealing was similar to that for HfSiOx, PDA caused a separation of the mean size of the open volumes. When this separation occurred, the value of the line-shape parameter S increased, suggesting an oxygen deficiency in the amorphous matrix. This fragmentation of the amorphous matrix can be suppressed by decreasing the annealing time.

本文言語English
論文番号023506
ジャーナルJournal of Applied Physics
98
2
DOI
出版ステータスPublished - 2005 7 15
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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