Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire

Hideto Miyake, Gou Nishio, Shuhei Suzuki, Kazumasa Hiramatsu, Hiroyuki Fukuyama, Jesbains Kaur, Noriyuki Kuwano

研究成果: Article査読

153 被引用数 (Scopus)

抄録

The annealing of an AlN buffer layer in a carbon-saturated N2-CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650-1700 °C. An AlN buffer layer with a thickness of 300nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700 °C for 1 h. We fabricated a 2-μm-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)-and (10-12)-plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 × 108cm-2.

本文言語English
論文番号025501
ジャーナルApplied Physics Express
9
2
DOI
出版ステータスPublished - 2016 2月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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